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K3N5VU1000F-DGC Datasheet, Samsung Semiconductor

K3N5VU1000F-DGC rom equivalent, 16m-bit (2mx8 / 1mx16) cmos mask rom.

K3N5VU1000F-DGC Avg. rating / M : 1.0 rating-11

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K3N5VU1000F-DGC Datasheet

Features and benefits


* Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)
* Fast access time 3.3V Operation : 100ns(Max.)@CL=50pF, 120ns(Max.)@CL=100pF 3.0V Op.

Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode .

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TAGS

K3N5VU1000F-DGC
16M-Bit
2Mx8
1Mx16
CMOS
Mask
ROM
K3N5VU1000F-DC
K3N5VU1000D-TC
K3N5V1000D-TC
Samsung Semiconductor

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